U. Herrmann et al., FORMATION OF AMORPHOUS AND NANO-CRYSTALLINE CARBON IN C+ IMPLANTED SILICA GLASS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(9), 1996, pp. 1596-1601
Citations number
23
Categorie Soggetti
Chemistry Physical
Journal title
Berichte der Bunsengesellschaft fur Physikalische Chemie
Rutherford backscattering spectrometry, VIS-NIR transmission of IR ref
lection measurements as well as Raman investigations have been used to
characterize C+ implanted (30 keV, 0.5 x 10(16) cm(-2)) silica glass.
Distribution of implanted ions can be described by a Gaussian profile
with a maximum at about 80 nm. C+ ions penetrate to a depth of 180 nm
in the substrate material. Transmission spectra in the VIS-NIR region
were simulated with the dielectric functions of substrate glass and a
morphous carbon using a multilayer model. Evaluation of the IR reflect
ance spectra indicates the creation of CO and a damage of the glass st
ructure up to a depth of about 300 nm. Raman measurements of implanted
samples show the aggregation of amorphous carbon. Anneling of samples
for one hour at 700 or 1000 degrees C in nitrogen atmosphere leads to
the formation of nano-crystalline carbon precipitates. Furthermore, t
he relaxation of the glass structure and the existence of Si-C bonds h
as been observed after heal treatment.