INFLUENCE OF OXIDE SURFACE-CHARGE ON THE SINE-VOLTAGE SWEEP C-V MEASUREMENTS

The influence of a negative mobile charge on the outer oxide surface o f MOS (metal oxide semiconductor) structures on the C-V measurements p erformed by the sine-voltage sweep C-V method was investigated. It was found that this charge induces changes on the depletion capacitance, which results in a specific-form of Zerbst plot, This fact can be used as an indication for the existence of this kind of instability and th at the final results of the measurements can be affected.