ANHARMONIC DECAY OF VIBRATIONAL-STATES IN AMORPHOUS-SILICON

Authors
Citation
J. Fabian et Pb. Allen, ANHARMONIC DECAY OF VIBRATIONAL-STATES IN AMORPHOUS-SILICON, Physical review letters, 77(18), 1996, pp. 3839-3842
Citations number
26
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
77
Issue
18
Year of publication
1996
Pages
3839 - 3842
Database
ISI
SICI code
0031-9007(1996)77:18<3839:ADOVIA>2.0.ZU;2-#
Abstract
Anharmonic decay rates are calculated for a realistic atomic model of amorphous silicon. The results show that the vibrational states decay on picosecond time scales and their decay rates increase with increasi ng frequency. These results disagree with a recent experiment. In cont rast to predictions of the fracton model, we find no evidence that the anharmonic decay is inhibited in the region of localized states.