LEAKAGE CURRENT STUDIES OF THICK A-SI-H DETECTORS UNDER HIGH-ELECTRIC-FIELD CONDITIONS

The leakage current of thick (up to 20 mu m) a-Si:H p-i-n diodes devel oped for nuclear radiation detection were investigated. Performing cur rent-voltage measurements at different temperatures and over a large e lectric field domain (up to 10(6) V/cm), different leakage current mec hanisms, such as electron injection and field enhanced thermal generat ion,. have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has als o been studied.