ANALYSIS OF IMPLANTATION-INDUCED DAMAGE AND AMORPHIZATION OF GASB

Authors
ZHENG YX CHEN LY ZHOU SM WANG YD QIAN YH LIN CL HE ZP ZHENG AS LI JM
Citation
Yx. Zheng et al., ANALYSIS OF IMPLANTATION-INDUCED DAMAGE AND AMORPHIZATION OF GASB, Physica status solidi. a, Applied research, 157(1), 1996, pp. 57-63
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
157
Issue
1
Year of publication
1996
Pages
57 - 63
Database
ISI
SICI code
0031-8965(1996)157:1<57:AOIDAA>2.0.ZU;2-7
Abstract
(100)-oriented GaSb crystalline wafers were implanted by 2 MeV N+ ions with doses from 1 x 10(13) to 1 x 10(15) cm(-2). The radiation damage was characterized by spectroscopic ellipsometry (SE) and Rutherford b ackscattering spectrometry in combination with channeling (RBS/C). The critical dose between 1 x 10(14) and 3 x 10(14) cm(-2) was determined . The SE data were fitted with the effective medium approximation (EMA ) model, and RBS/C data were analyzed by numerical integration. Both g ive coinciding quantitative knowledge on the radiation damage.