GROWTH, OPTICAL AND ELECTRICAL CHARACTERIZATION OF HGBR1.16I0.84 SINGLE-CRYSTALS

Citation
M. Daviti et al., GROWTH, OPTICAL AND ELECTRICAL CHARACTERIZATION OF HGBR1.16I0.84 SINGLE-CRYSTALS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 62-65
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
380
Issue
1-2
Year of publication
1996
Pages
62 - 65
Database
ISI
SICI code
0168-9002(1996)380:1-2<62:GOAECO>2.0.ZU;2-8
Abstract
HgBr1.16I0.84 is a ternary compound, corresponding to the stoichiometr y 58 mol% HgBr2, 42 mol % HgI2 and it could be as promising for detect ion applications as alpha-HgI2. Crystals of HgBr1.16I0.84 were grown f rom the melt by the Bridgman-Stockbarger method. The crystals were cha racterized optically by transmission measurements in their fundamental energy gap region and electrically, by measuring the ln(sigma)-1000/T characteristic in the 260-360 K region. Also I-V characteristics were obtained at room temperature. Finally, the conductivity type was dete rmined by the thermal electromotive force (EMF) method.