ROLE OF LINEWIDTH ENHANCEMENT FACTOR ON INJECTION-LOCKED SEMICONDUCTOR-LASER AMPLIFIER

Authors
CHATTOPADHYAY T BHATTACHARYA M
Citation
T. Chattopadhyay et M. Bhattacharya, ROLE OF LINEWIDTH ENHANCEMENT FACTOR ON INJECTION-LOCKED SEMICONDUCTOR-LASER AMPLIFIER, Optics communications, 132(1-2), 1996, pp. 61-66
Citations number
15
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
132
Issue
1-2
Year of publication
1996
Pages
61 - 66
Database
ISI
SICI code
0030-4018(1996)132:1-2<61:ROLEFO>2.0.ZU;2-P
Abstract
The adverse effects of the linewidth enhancement factor on the FM sign al amplification characteristics of an injection-locked semiconductor laser have been studied theoretically. Suppression of the optical FM i ndex, reduction of amplifier bandwidth and limitation of the maximum u sable value of the FM index, which are the major effects produced by t he linewidth enhancement factor, have been analyzed by developing a no vel transmission line model of the injection-locked semiconductor lase r.