DEFECTS IN CDTE AND CD1-XZNXTE

Citation
Dm. Hofmann et al., DEFECTS IN CDTE AND CD1-XZNXTE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 117-120
Citations number
26
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
380
Issue
1-2
Year of publication
1996
Pages
117 - 120
Database
ISI
SICI code
0168-9002(1996)380:1-2<117:DICAC>2.0.ZU;2-C
Abstract
The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd1-xZnxTe as obtained by electron paramagnetic resonance and rel ated techniques is reviewed. Special attention will be paid to the pro perties of intrinsic defects such as vacancies (V-Cd and V-Te) and com plexes formed with dopants (A centres: V-Cd-donor, and donor-V-Cd-dono r complexes). In view of the high resistive material required for X- a nd gamma-ray detector applications such defects seem to play an import ant role.