Dm. Hofmann et al., DEFECTS IN CDTE AND CD1-XZNXTE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 117-120
The current knowledge on extrinsic and intrinsic point defects in CdTe
and Cd1-xZnxTe as obtained by electron paramagnetic resonance and rel
ated techniques is reviewed. Special attention will be paid to the pro
perties of intrinsic defects such as vacancies (V-Cd and V-Te) and com
plexes formed with dopants (A centres: V-Cd-donor, and donor-V-Cd-dono
r complexes). In view of the high resistive material required for X- a
nd gamma-ray detector applications such defects seem to play an import
ant role.