A SIMPLE GENERAL ANALYTICAL SOLUTION FOR THE QUANTUM EFFICIENCY OF FRONT-SURFACE-FIELD SOLAR-CELLS

The optimisation of a FSF solar cell or a BSF thin film solar cell nec essitates an understanding of the characteristics of an illuminated hi gh-low junction. However, except for minority carrier reflection, the photocurrent collection property of the light-generated carriers in th e high region by a high-low junction has rarely been treated previousl y. It is the purpose of this paper to present a simple solution for th e contribution of the light-generated current from the high region, Th e model shows that a high-low junction may be very efficient in light- generated current collection, and this property is primarily responsib le for the increase of the short wavelength quantum efficiency using a FSF. The effects of the FSF layer doping concentration and its thickn ess on the quantum efficiency are discussed by using the computed resu lts, the optimisation of the FSF is then made. The calculations take i nto account the high doping effects of degeneracy and bandgap narrowin g.