COMPARISON OF HGI2, CDTE AND SI (P-I-N) X-RAY-DETECTORS

This paper presents a comparison of HgI2, CdTe and Si (p-i-n) detector technologies for use in X-ray spectroscopy applications in terms of t he basic material properties, the detector fabrication techniques and the spectral responses achieved. The requirements imposed on the detec tor technologies by the design and construction of portable, hand-held instrumentation are discussed. A number of new spectral results are s hown. For example, the energy resolution of 596 eV FWHM at 59.5 keV ob tained with CdTe (p-i-n) detectors and the energy resolution of 415 eV FWHM at 22 keV measured with HgI2 structures are reported. A discussi on of the various practical applications with the above detector techn ologies is presented.