HIGH-PERFORMANCE SUBMICROMETER GATELENGTH GAINAS INP COMPOSITE CHANNEL HEMTS WITH REGROWN OHMIC CONTACTS/

Authors
SHEALY JB MATLOUBIAN M LIU TY THOMPSON MA HASHEMI MM DENBAARS SP MISHRA UK
Citation
Jb. Shealy et al., HIGH-PERFORMANCE SUBMICROMETER GATELENGTH GAINAS INP COMPOSITE CHANNEL HEMTS WITH REGROWN OHMIC CONTACTS/, IEEE electron device letters, 17(11), 1996, pp. 540-542
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
11
Year of publication
1996
Pages
540 - 542
Database
ISI
SICI code
0741-3106(1996)17:11<540:HSGGIC>2.0.ZU;2-A
Abstract
This letter reports DC and RF performance of 0.25 mu m gatelength GaIn As/InP composite channel HEMT's with nonalloyed, regrown ohmic contact s by MOCVD, Regrown channel contacts are used to achieve low contact r esistance (0.35 Omega-mm) to (50 Angstrom) GaInAs/ (150 Angstrom) InP composite channel HEMT's, High transconductance (600 mS/mm), high full channel current (650 mA/mm), and high peak cut-off frequencies (F-t = 70 GHz, F-max = 170 GHz) are observed, Contact transfer resistance of regrown channel contacts is compared to conventional alloyed contacts for varying GaInAs/InP channel composition.