NEAR-FIELD SCANNING OPTICAL MICROSCOPY OF POLARIZATION BISTABLE LASER-DIODES

TE/TM polarization bistability in a lambda=1.3 mu m ridge-waveguide In GaAsP/InP bulk laser is studied by near-field scanning optical microsc opy with an optical resolution of better than lambda/8. The near-field mode profiles of TE and TM emission show different lateral widths and distinctly different mode center positions. This lateral shift is rel ated to a nonuniform strain distribution along the active layer. Based on this strain gradient, we present a model that accounts for the hys teresislike current dependence of the polarization resolved laser outp ut. (C) 1996 American Institute of Physics.