NONCONTACT MEASUREMENT OF TRANSPORT-PROPERTIES OF LONG-BULK-CARRIER-LIFETIME SI WAFERS USING PHOTOTHERMAL RADIOMETRY

A theoretical model for the photothermal radiometric signal from semic onductors of finite thickness has been used to measure simultaneously the carrier diffusion coefficient, carrier lifetime, and surface recom bination velocity of FZ Si wafers with very long bulk carrier lifetime s (industrial microelectronic grade). The results showed the importanc e of accounting for the finite thickness of the substrate in obtaining accurate measurements of these parameters using the entirely nonconta cting radiometric approach. (C) 1995 American Institute of Physics.