FAR-INFRARED ELLIPSOMETRY OF DEPLETED SURFACE-LAYER IN HEAVILY-DOPED N-TYPE GAAS

Authors
HUMLICEK J HENN R CARDONA M
Citation
J. Humlicek et al., FAR-INFRARED ELLIPSOMETRY OF DEPLETED SURFACE-LAYER IN HEAVILY-DOPED N-TYPE GAAS, Applied physics letters, 69(17), 1996, pp. 2581-2583
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
17
Year of publication
1996
Pages
2581 - 2583
Database
ISI
SICI code
0003-6951(1996)69:17<2581:FEODSI>2.0.ZU;2-2
Abstract
Far-infrared ellipsometric spectra of n-type (100) GaAs display sharp features in the range of the longitudinal optical phonon of intrinsic material, originating in the surface depletion region. We compare meas ured relative ellipsometric phase shifts with model calculations of th e graded depletion layer. A very good agreement is observed, enabling us to determine the surface potential. (C) 1996 American Institute of Physics.