SYNTHESIS OF INP-BASED 1.3-MU-M BAND-GAP PSEUDOALLOY BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

Synthesis of short period GaInAs/InP superlattices, or pseudoalloys, b y organometallic vapor phase epitaxy for replacement of the mixed crys tal GaInAsP deposited on InP is discussed. Raman scattering, double cr ystal x-ray diffraction, photoluminescence, and atomic force microscop y are used to investigate accumulative interface roughening and layer intermixing in the pseudoalloy. We demonstrate that pseudoalloy qualit y is not necessarily comprised by the presence of unintentional interf acial layers and show that thick (>2500 Angstrom) InP-based pseudoallo ys with structural and optical properties that compare favorably with those of the random alloy can be synthesized. Finally, we present resu lts on broad area 1.3 mu m lasers incorporating the pseudoalloy as the optical gain media in separate confinement heterostructure devices. ( C) 1996 American Institute of Physics.