M. Leibovitch et al., DETERMINING BAND OFFSETS USING SURFACE PHOTOVOLTAGE SPECTROSCOPY - THE INP IN0.53GA0.47 HETEROJUNCTION/, Applied physics letters, 69(17), 1996, pp. 2587-2589
A direct technique for determining band offsets at semiconductor heter
ojunctions is presented, which is applicable to at least any type I he
terojunction, where the top layer doping is sufficiently low. The tech
nique is based on surface photovoltage spectroscopy measurements as a
function of overlayer thickness, A numerically simulated example shows
that the band offset is a very strong function of the critical overla
yer thickness, at which the overlayer contribution to the surface phot
ovoltage spectrum appears, The method is applied to the technologicall
y important InP/InGaAs heterojunction and is shown to yield the common
ly accepted band offset value. (C) 1996 American Institute of Physics.