NOVEL CLASS OF LOW-MOLECULAR-WEIGHT ORGANIC RESISTS FOR NANOMETER LITHOGRAPHY

A novel class of low molecular-weight organic resist materials for nan ometer lithography, 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4',4 ''-tris(allylsuccinimido)triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass-transition temperatu re (Tg) of 64 degrees C and ASITPA with a Tg of 80 degrees C were foun d to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an elec tron beam at 50 keV. (C) 1996 American Institute of Physics.