SIMULATION AND MODELING OF A NEW SILICON X-RAY DRIFT DETECTOR DESIGN FOR SYNCHROTRON-RADIATION APPLICATIONS

In this paper we describe the design of a new type of detector based o n silicon drift chamber (SDC) detectors for near-room temperature X-ra y absorption fine structure (EXAFS) applications. Theoretical analysis shows that these devices are capable of electronic noise levels that are competitive with cryogenic detectors at significantly higher count rates. Novel field-plate electrodes and integration of the FET with t he use of a secondary epitaxial layer will be discussed. Results of mo delling and simulation of the new SDC structures will be presented.