The positron lifetime technique has been used for studying the defect
structure of titanium (Ti) thin films obtained by d.c. magnetron sputt
ering on Ti substrates. It was found that for non-annealed samples lar
ge voids exist in the Ti films. Sample annealing for 1 h at 450 degree
s C leads to a decrease of the void concentration. By checking the lin
earity of the valence annihilation parameter S versus the core annihil
ation parameter W we have shown that the type of the defects in the fi
lms of different thickness is the same. Comparison of the characterist
ic slope R(d) for non-annealed and annealed samples demonstrates that
annealing changes the defect types in the films.