A. Vonrichthofen et R. Domnick, METASTABLE SINGLE-PHASE POLYCRYSTALLINE ALUMINUM OXYNITRIDE FILMS GROWN BY MSIP - CONSTITUTION AND STRUCTURE, Thin solid films, 283(1-2), 1996, pp. 37-44
By means of physical vapor deposition, a variety of metastable phases
can be deposited due to the low substrate temperatures. Results are re
ported on the preparation of homogeneous metastable Al-O-N layers prod
uced by reactive magnetron sputtering ion plating using an Al target a
nd an Ar-O-2-N-2 gas mixture. At 190 degrees C substrate temperature a
nd variable gas pressures of O-2 and N-2 a variety of coatings with di
fferent O and N content were prepared and analyzed by means of X-ray p
hotoelectron spectroscopy, Auger electron spectroscopy, high-resolutio
n transmission electron microscopy and high-resolution scanning electr
on microscopy. Oxygen-rich Al-O-N phases were found to be nanocrystall
ine with a cubic structure like gamma-Al2O3 (spinel), nitrogen-rich ph
ases displayed a hexagonal structure like AlN (wurtzite). Around O/N=1
.5 the phase was TEM amorphous.