M. Gilo et N. Croitoru, PROPERTIES OF TIO2 FILMS PREPARED BY ION-ASSISTED DEPOSITION USING A GRIDLESS END-HALL ION-SOURCE, Thin solid films, 283(1-2), 1996, pp. 84-89
TiO2 thin films were deposited using electron-beam gun evaporation wit
h ion-assisted deposition (IAD) of low energy oxygen ions from an end-
Hall ion source. The index of refraction and stress were measured as a
function of the ion source voltage and current and were compared with
results without IAD. The index of refraction increased with the incre
ase of the ion gun voltage. The stress changed from compressive to ten
sile with the voltage increase, resulting in a better performance than
conventional thermal evaporation. Atomic force microscopy was used to
study the microstructure of the films. Quantitative roughness measure
ments of the surface showed that the roughness of the IAD films was sm
aller than that of layers without IAD.