ION-ASSISTED DEPOSITION OF C-N AND SI-C-N FILMS

Synthesis of C-N and Si-C-N films was achieved by performing an ion sp uttering deposition of carbon and silicon in a nitrogen atmosphere, wi th simultaneous nitrogen ion bombardment of substrates upon which film s were grown. The relationship between the deposition conditions and t he composition of the resultant C-N and Si-C-N films was identified us ing RES. The chemical shifts of C 1s and N 1s binding energy observed through XPS studies revealed that the nitrogen atoms incorporated into the films were chemically bonded to the carbon atoms and, in the tern ary case, to the silicon. Hardness measurements were also carried out.