A LOW-ENERGY ION-BEAM-ASSISTED DEPOSITION TECHNIQUE FOR REALIZING ISO-TYPE SIGE SI HETEROINTERFACE DIODES/

Authors
MOHAJERZADEH S SELVAKUMAR CR BRODIE DE ROBERTSON MD CORBETT JM
Citation
S. Mohajerzadeh et al., A LOW-ENERGY ION-BEAM-ASSISTED DEPOSITION TECHNIQUE FOR REALIZING ISO-TYPE SIGE SI HETEROINTERFACE DIODES/, Thin solid films, 283(1-2), 1996, pp. 182-187
Citations number
17
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
283
Issue
1-2
Year of publication
1996
Pages
182 - 187
Database
ISI
SICI code
0040-6090(1996)283:1-2<182:ALIDTF>2.0.ZU;2-V
Abstract
Amorphous SiGe/Si iso-type diodes have been successfully fabricated at a low temperature of about 250 degrees C, using a low energy ion-beam assisted vacuum co-evaporation technique. The physical characteristic s of the prepared structure is studied using RBS, SIMS and high resolu tion TEM. The electrical characteristics of the iso-type diodes are st udied at different ambient temperatures, which show an ideal behavior over a significant range of temperatures (90-200 K). An energy barrier of 0.38 V is extracted from the current-voltage study.