Amorphous hydrogenated carbon layers were deposited from ethylene in a
capacitively coupled r.f.-discharge reactor under different self-bias
voltages and by addition of different amounts of phosphine as an assu
med ''doping'' gas. The optical constants of the thin films were deter
mined by analysing reflection, transmission and photothermal deflectio
n measurements. Accordingly, the absorption behaviour below an absorpt
ion coefficient alpha of 10(4) cm(-1) can be fitted very well by a sim
ple power law. Extrapolating the absorption to lower excitation energi
es suggests an increase of the density of states at the Fermi level ac
companying the increase of the electrical conductivity with increasing
self-bias voltage or phosphine concentration. No hint of any ''doping
'' effect is found.