EFFECT OF LIGHT SOAKING ON THE ELECTRICAL-PROPERTIES OF THE GE0.20TE0.75BI0.05 GLASS SYSTEM

Authors
FADEL M SEDEEK K ELSALAM FA
Citation
M. Fadel et al., EFFECT OF LIGHT SOAKING ON THE ELECTRICAL-PROPERTIES OF THE GE0.20TE0.75BI0.05 GLASS SYSTEM, Thin solid films, 283(1-2), 1996, pp. 239-242
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
283
Issue
1-2
Year of publication
1996
Pages
239 - 242
Database
ISI
SICI code
0040-6090(1996)283:1-2<239:EOLSOT>2.0.ZU;2-E
Abstract
The dependence of the electrical conductivity, measured either in dark ness or after exposure to different durations of light, on temperature and exposure time have been studied for Ge0.20Te0.75Bi0.05 thin films of different thicknesses. The conductivity showed an initial gradual decrease with time, ending with saturation. The activation energy was found to increase by increasing the period of light soaking. The resul ts were explained on the basis of light saturation of the vacant state s which bend the band edges at the semiconductor-metal interface.