CONTROL OF FIELD SCREENING EFFECTS IN GAINAS(P) GAINASP QUANTUM-CONFINED STARK-EFFECT MODULATOR STRUCTURES/

We compare the field screening behavior of quantum-confined Stark effe ct modulator structures where the GaInAsP/InP heterojunction is in the intrinsic (standard structure) or in the doped regions (modified stru cture) at working wavelengths of 1.55 and 1.3 mu m. The modified struc tures are obtained by expanding the GaInAsP confinement layers into th e p-doped and n-doped regions without changing the total intrinsic lay er thickness. The effectiveness of the InP heterobarriers for the hole s on the p-side and for the electrons on the n-side is thereby lowered . A significant reduction of field screening for the modified structur es is achieved. (C) 1996 American Institute of Physics.