LOW-TEMPERATURE CHARACTERIZATION OF MODULATION-DOPED SIGE GROWN ON BONDED SILICON-ON-INSULATOR

Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells wer e grown on bonded silicon-on-insulator (SOI) substrates. Comparison wi th similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low temperatures with a maximum value of 16 810 cm (2)/V s for 2.05 x 10(11) cm(-2) carries at 298 mK. Effec tive masses obtained from the temperature dependence of Shubnikov-de H aas oscillations have a value of (0.27 +/- 0.02) m(0) compared to (0.2 3 +/- 0.02) m(0) for quantum wells on Si(100) while the cyclotron reso nance effective masses obtained at higher magnetic fields without cons ideration for nonparabolicity effects have values between 0.25 and 0.2 9 m(0). Ratios of the transport and quantum lifetimes, tau/tau(q) = 2. 13 +/- 0.10, were obtained for the SOI material that are, we believe, the highest reported for any pseudomorphic SiGe modulation doped struc ture and demonstrates that there is less interface roughness or charge scattering in the SOI material than in metal-oxide-semiconductor fiel d effect transistors or other pseudomorphic SiGe modulation doped quan tum wells. (C) 1996 American Institute of Physics.