INFLUENCE OF ELECTRON-IRRADIATION AND ANNEALING ON THE PHOTOLUMINESCENCE OF SI GE SUPERLATTICES AND SI/GE QUANTUM-WELLS/

The influence of irradiation with 3-4 MeV electrons and subsequent ann ealing on Si/Ge strained layer superlattices (SLs) and Si/Ge quantum w ells (QWs) both containing monolayers of pure Ge has been studied by p hotoluminescence (PL). An enhanced radiation resistance of the superla ttice PL was found as compared to bulk Si. A different post-irradiatio n annealing behavior of the SLs and QWs was observed, which is probabl y connected with the different geometries and strain levels in the two types of sample structures involved. The results are compared with ex periments for hydrogen passivation in a glow discharge plasma where we observe also different behavior of the two types of structures studie d.