I. Teerlinck et al., IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(10), 1996, pp. 3323-3327
The impact of light on the copper outplating from aqueous 0.5% HF solu
tions on 10-20 Ohm cm (100) silicon wafers is investigated. Illuminati
on is found to drastically increase the copper deposition. A model bas
ed on the semiconductor properties of the silicon substrate which desc
ribes the copper plating onto silicon is proposed. It is found that th
e copper deposition onto these silicon surfaces is limited by the mino
rity carrier supply at the wafer surface.