IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS

Citation
I. Teerlinck et al., IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(10), 1996, pp. 3323-3327
Citations number
26
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
143
Issue
10
Year of publication
1996
Pages
3323 - 3327
Database
ISI
SICI code
0013-4651(1996)143:10<3323:IOTEPO>2.0.ZU;2-L
Abstract
The impact of light on the copper outplating from aqueous 0.5% HF solu tions on 10-20 Ohm cm (100) silicon wafers is investigated. Illuminati on is found to drastically increase the copper deposition. A model bas ed on the semiconductor properties of the silicon substrate which desc ribes the copper plating onto silicon is proposed. It is found that th e copper deposition onto these silicon surfaces is limited by the mino rity carrier supply at the wafer surface.