INFLUENCE OF COOLING CONDITION DURING CRYSTAL-GROWTH OF CZ-SI ON OXIDE BREAKDOWN PROPERTY (REPRINTED FROM OYO-BUTSURI, VOL 65, 1996)

Authors
IWASAKI T TSUMORI Y NAKAI K HAGA H KOJIMA K NAKASHIZU T
Citation
T. Iwasaki et al., INFLUENCE OF COOLING CONDITION DURING CRYSTAL-GROWTH OF CZ-SI ON OXIDE BREAKDOWN PROPERTY (REPRINTED FROM OYO-BUTSURI, VOL 65, 1996), Journal of the Electrochemical Society, 143(10), 1996, pp. 3383-3388
Citations number
19
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
143
Issue
10
Year of publication
1996
Pages
3383 - 3388
Database
ISI
SICI code
0013-4651(1996)143:10<3383:IOCCDC>2.0.ZU;2-0
Abstract
In order to study the influence of the cooling condition of growing CZ -Si crystals on gate oxide integrity (GOI) and the formation mechanism of the defects that deteriorate GOI, we have conducted growth-halting experiments and heat-treatment experiments to simulate the cooling pa tterns of the growing crystals. We have found that GOI and the defect formation are strongly affected by the cooling condition in a critical temperature range around 1050 degrees C.