OPTICAL MODULATION TECHNIQUE FOR CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR-LASERS

We propose a new accurate method for differential carrier lifetime mea surement, in which the laser under test biased below threshold is opti cally modulated. Experimental results are very reproducible and show v ery high signal-to-noise ratio, allowing also direct measurements of c arrier density and transparency carrier density N-0. No additional tec hnological process for the laser under test are required.