BROAD-BAND SUPERLUMINESCENT DIODES FABRICATED ON A SUBSTRATE WITH ASYMMETRIC DUAL QUANTUM-WELLS

Broad-band AlGaAs-GaAs superluminescent diodes are fabricated using as ymmetric dual quantum wells. With a proper design of the quantum-well structure, the spectral width of the superluminescent diodes could be engineered. By choosing 40 Angstrom and 75 Angstrom, respectively, for the two quantum wells, the spectrum remains bell-shaped and is broade ned to 2 similar to 3 times that of the conventional superluminescent diodes. The measured spectra show that there is no obvious preference on the transition in either well at any pumping current.