QUANTITATIVE CHARACTERIZATION OF PROTON-EXCHANGED LAYERS IN LITAO3 OPTOELECTRONIC DEVICES BY LINE-FOCUS-BEAM ACOUSTIC MICROSCOPY

Citation
J. Kushibiki et al., QUANTITATIVE CHARACTERIZATION OF PROTON-EXCHANGED LAYERS IN LITAO3 OPTOELECTRONIC DEVICES BY LINE-FOCUS-BEAM ACOUSTIC MICROSCOPY, IEEE photonics technology letters, 8(11), 1996, pp. 1516-1518
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
8
Issue
11
Year of publication
1996
Pages
1516 - 1518
Database
ISI
SICI code
1041-1135(1996)8:11<1516:QCOPLI>2.0.ZU;2-D
Abstract
Application of line-focus-beam (LFB) acoustic microscopy is extended t o quantitative characterization of proton-exchanged/annealed layers em ployed in LiTaO3 optical waveguides. Several specimens of Z-cut LiTaO3 substrates, processed under the fabrication conditions for second-har monic generation (SHG) optoelectronic devices, were prepared for measu rements of the leaky surface acoustic wave (LSAW) velocities. Remarkab le decreases in LSAW velocity due to the processes of proton exchange and annealing were observed, providing very useful information on the proton concentration and depth in diffusion layer, and on the process temperature distribution. It is found that measurement sensitivity is highest in the Y-axis wave propagation direction and the resolution to the optical waveguide parameters of diffusion depth and refractive in dex is much greater than the conventional techniques. It is suggested that this ultrasonic method should be adopted as a new analytical tech nique for development and evaluation of device fabrication processes a nd systems destined for future mass production.