NONLINEARITIES IN GAINAS INP P-I-N PHOTODETECTORS/

Authors
WU TX VANDERVORST A
Citation
Tx. Wu et A. Vandervorst, NONLINEARITIES IN GAINAS INP P-I-N PHOTODETECTORS/, Microwave and optical technology letters, 13(5), 1996, pp. 297-300
Citations number
6
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
13
Issue
5
Year of publication
1996
Pages
297 - 300
Database
ISI
SICI code
0895-2477(1996)13:5<297:NIGIPP>2.0.ZU;2-0
Abstract
In this article we present the analysis and simulation of nonlineariti es in the GaInAs/InP p-i-n photodetector at high illuminations. It is shown that the nonlinearities are generated principally in the low-fie ld region of the intrinsic layer. The frequency response, especially f or the nonlinear characteristics, is illustrated to differ significant ly between top-illumination and substrate-illumination operations at c ommon biasing level. (C) 1996 John Wiley & Sons, Inc.