THERMALLY STIMULATED CURRENT STUDY OF ELECTRON-IRRADIATED SEMIINSULATING FE-DOPED INP

Electron-irradiation induced defects in semi-insulated Fe-doped InP ha ve been studied using a thermally stimulated current (TSC) method. New peaks, e(1), e(2) and e(3), with activation energies of 0.18, 0.39 an d 0.52 eV, respectively, were observed. Based upon the annealing behav ior of defects observed by TSC and photoluminescence methods, the e(1) peak produced by the irradiation with an electron dose of 1 x 10(16) cm(-2) was linked to In-p antisite defects that probably form complexe s. The e(3) peak produced by irradiation with doses below 1x10(15) cm( -2) was associated with Frenkel type defects which are the preceding s tage of the creation of antisite defects. Some TSC peaks appeared in t he process of annealing. Copyright (C) 1996 Elsevier Science Ltd