RANGE PROFILE PARAMETER OF HG+ IMPLANTED IN SBN CRYSTAL

Authors
WANG KM LIU XJ SHI BR LU F MEN MQ LIU JT WANG YH CHEN HC
Citation
Km. Wang et al., RANGE PROFILE PARAMETER OF HG+ IMPLANTED IN SBN CRYSTAL, Solid state communications, 100(6), 1996, pp. 397-401
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
100
Issue
6
Year of publication
1996
Pages
397 - 401
Database
ISI
SICI code
0038-1098(1996)100:6<397:RPPOHI>2.0.ZU;2-R
Abstract
Range profiles of Hg+ implanted at energies from 50 to 200 keV in Nd0. 05Ce0.02Na0.47(Sr0.61Ba0.39)(0.66)Nb2O6 and Pr-0.03(Sr0.61Ba0.39)(0.95 5)Nb2O6 crystals are studied by Rutherford backscattering of MeV He io ns. The measured projected range and range straggling are compared wit h calculated values based on Biersack's angular diffusion model. The r esult shows that the agreement between experimental and calculated val ues is good for the mean projected ranges. After considering second en ergy loss terms, a better agreement for the range straggling is obtain ed. Copyright (C) 1996 Elsevier Science Ltd