Me. Kompan et al., OBSERVATION OF A COMPRESSED STATE OF THE QUANTUM-WIRE MATERIAL IN POROUS SILICON BY THE METHOD OF RAMAN-SCATTERING, JETP letters, 64(10), 1996, pp. 748-753
An experiment on Raman scattering in porous silicon containing a regul
ar system of quantum wires reveals a shift of the phonon frequencies o
f the silicon lattice toward higher energies. The effect is interprete
d as a manifestation of a compressed state of the material in the quan
tum wires. It is shown that the observed deformation plays a large rol
e in the formation of the structure of porous silicon. (C) 1996 Americ
an Institute of Physics.