STUDIES OF MOCVD FOR HIGH T-C THIN-FILMS

In this article we report on results obtained from studies of the effe ct of total pressure and carrier gas flow rate on the rate of precurso r evaporation for typical precursors used in the MOCVD of high tempera ture superconductors (HTS). We find that this process is under signifi cant mass transfer control and we consider the implications of this fo r growth of HTS. In particular, we discuss the problems associated wit h the use of solid precursors and possible strategies for solving the difficulties. (C) 1996 Elsevier Science Limited and Techna S.r.l.