MECHANISM OF METAL-CARBENOID INSERTION INTO THE SI-H BOND

Authors
LANDAIS Y PARRARAPADO L PLANCHENAULT D WEBER V
Citation
Y. Landais et al., MECHANISM OF METAL-CARBENOID INSERTION INTO THE SI-H BOND, Tetrahedron letters, 38(2), 1997, pp. 229-232
Citations number
22
Categorie Soggetti
Chemistry Inorganic & Nuclear
Journal title
Tetrahedron letters → ACNP
ISSN journal
00404039
Volume
38
Issue
2
Year of publication
1997
Pages
229 - 232
Database
ISI
SICI code
0040-4039(1997)38:2<229:MOMIIT>2.0.ZU;2-W
Abstract
Kinetic investigations on the insertion of metal-carbenoid intermediat es into the SI-H bond have been carried out. A kinetic isotope effect of 1.5 was found and the plot of log k(X)/k(H) vs sigma for the reacti on of arylsilanes with EDA, gave a straight line with rho = -0.31. It was thus concluded that the insertion proceeds through a concerted pat hway with development of a small positive charge at the silicon centre and it relatively early transition state. Copyright (C) 1996 Elsevier Science Ltd