INFLUENCE OF SEGREGATION IN QUANTUM-WELL STRUCTURES

Authors
MURRAY R BRYAN C YU H LYCETT S
Citation
R. Murray et al., INFLUENCE OF SEGREGATION IN QUANTUM-WELL STRUCTURES, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 341-345
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
7
Issue
5
Year of publication
1996
Pages
341 - 345
Database
ISI
SICI code
0957-4522(1996)7:5<341:IOSIQS>2.0.ZU;2-O
Abstract
The potential associated with quantum well (QW) structures is usually assumed to be a step function; this implies a compositional abruptness at each interface. But abrupt interfaces do not occur in practice, es pecially if one of the atoms segregates during growth. This leads to a symmetries in the QW potentials which could radically affect device pe rformance.