A COMPARISON OF STRAIN RELIEF BEHAVIOR OF INXGA1-XAS ALLOY ON GAAS(001) AND GAAS(110) SUBSTRATES

Authors
ZHANG X PASHLEY DW
Citation
X. Zhang et Dw. Pashley, A COMPARISON OF STRAIN RELIEF BEHAVIOR OF INXGA1-XAS ALLOY ON GAAS(001) AND GAAS(110) SUBSTRATES, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 361-367
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
7
Issue
5
Year of publication
1996
Pages
361 - 367
Database
ISI
SICI code
0957-4522(1996)7:5<361:ACOSRB>2.0.ZU;2-C
Abstract
A comparative study on the strain relief behaviour of epitaxially grow n InxGa1-xAs (where 0.1 less than or equal to x less than or equal to 1) alloys on GaAs (0 0 1) and (1 1 0) were carried out using transmiss ion electron microscopy (TEM) and high resolution X-ray diffraction (X RD). Three different strain relief mechanisms related to the formation of misfit dislocations (MDs) were observed. The dominant strain relie f process can be a single mechanism or a combination of two of the thr ee mechanisms depending on the substrate orientation and the In conten t.