6-TERMINAL MOSFET - MODELING AND APPLICATIONS IN HIGHLY LINEAR, ELECTRONICALLY TUNABLE RESISTORS

Authors
VAVELIDIS K TSIVIDIS YP OPTEYNDE F PAPANANOS Y
Citation
K. Vavelidis et al., 6-TERMINAL MOSFET - MODELING AND APPLICATIONS IN HIGHLY LINEAR, ELECTRONICALLY TUNABLE RESISTORS, IEEE journal of solid-state circuits, 32(1), 1997, pp. 4-12
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
32
Issue
1
Year of publication
1997
Pages
4 - 12
Database
ISI
SICI code
0018-9200(1997)32:1<4:6M-MAA>2.0.ZU;2-J
Abstract
The electrical properties of a six-terminal MOSFET are studied and a s trong-inversion model is derived. Due to its special structure, the si x-terminal MOSFET can be operated as a highly-linear, electronically-t unable resistor. This is managed by applying proper voltages at the te rminals of the structure, achieving channel uniformity independent of applied signals, Measurements on fabricated test devices yield distort ion levels of -90 dB for 1 V-p-p signals.