20.8 GB S GAAS LSI SELF-ROUTING SWITCH FOR ATM SWITCHING SYSTEMS/

Citation
H. Yamada et al., 20.8 GB S GAAS LSI SELF-ROUTING SWITCH FOR ATM SWITCHING SYSTEMS/, IEEE journal of solid-state circuits, 32(1), 1997, pp. 31-37
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189200
Volume
32
Issue
1
Year of publication
1997
Pages
31 - 37
Database
ISI
SICI code
0018-9200(1997)32:1<31:2GSGLS>2.0.ZU;2-Y
Abstract
An 8 x 8 self-routing hardware switch providing 20.8 Gb/s throughput h as been developed for asynchronous transfer mode (ATM) switching syste ms. The basic architecture of this switch is a Batcher-Banyan network, A new mechanism for data processing and distributing high-speed signa ls is proposed, This switching system consists of three LSI's using a 0.5-mu m gate GaAs MESFET technology, These LSI's are a switching netw ork LSI for exchanging packet cells,vith eight cell channels, a negoti ation network for screening of cells destined for the same output port , and a demultiplexer LSI for converting the cell streams from the swi tching network LSI to the eight streams per channel, These LSI's are m ounted in a 520-pin multichip module package. The total number of logi c gates is 13.3 k, and the power dissipation is 24 W, The switching sy stem fully operates at a data rate of 2.6 Gb/s, and its throughput is 20.8 Gb/s.