PROGRAM LOAD ADAPTIVE VOLTAGE GENERATOR FOR FLASH MEMORIES

This paper describes a program load voltage generator for hash memorie s, It is based on an adaptive Feedback loop which senses the current d elivered to the memory cells during programming and adjusts the output voltage accordingly to compensate for the voltage drop caused by the programming current across the bit-line select transistors, The propos ed circuit (silicon area = 0.065 mm(2)) was integrated in a 0.8-mu m C MOS 4-Mb hash memory device (0.6 mu m in the matrix), Experimental eva luations showed that very effective compensation is achieved, with bit -line voltage kept at the desired value during the whole programming o peration, A spread as small as 70 mV was measured between the single-b it and 16-b programming cases.