PHOTON ENERGY-DEPENDENCE OF SYNCHROTRON-RADIATION-INDUCED GROWTH SUPPRESSION AND INITIATION IN AL CHEMICAL-VAPOR-DEPOSITION .2. SURFACE-ANALYSIS BY AUGER-ELECTRON SPECTROSCOPY
I. Nishiyama et F. Uesugi, PHOTON ENERGY-DEPENDENCE OF SYNCHROTRON-RADIATION-INDUCED GROWTH SUPPRESSION AND INITIATION IN AL CHEMICAL-VAPOR-DEPOSITION .2. SURFACE-ANALYSIS BY AUGER-ELECTRON SPECTROSCOPY, Applied surface science, 103(3), 1996, pp. 299-306
Citations number
26
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
We analyzed the photochemical reaction of dimethyl aluminum hydride on
Si and SiO2 surfaces as a function of photon energy using synchrotron
radiation. Al LVV chemical shifts in the Auger electron spectra were
clearly different, depending on whether core or valence electrons were
excited. When high-energy photons were used to excite the core electr
ons, aluminum carbide was formed on the Si surface. On the other hand,
when low energy photons, which can only excite valence electrons, wer
e utilized, metallic aluminum was formed on the Si and SiO2 surfaces.
These results were consistent with the previously reported photon ener
gy dependence of CVD characteristics. That is, when AlC was formed wit
h core electron excitation, growth was suppressed, and negative projec
tion patterning was achieved. On the other hand, when Al was formed wi
th valence electron excitation, growth was initiated and positive patt
erning was performed on the SiO2 surface. We proposed a model which ex
plained how the Al growth was controlled by the surface layers formed
by photochemical reaction, and why growth suppression and initiation c
hanged with the excitation photon energy.