ACTIVATION OF DOPANT IN THE P-LAYER OF AMORPHOUS-SILICON SOLAR-CELLS UNDER ILLUMINATION

Authors
CAPUTO D DECESARE G
Citation
D. Caputo et G. Decesare, ACTIVATION OF DOPANT IN THE P-LAYER OF AMORPHOUS-SILICON SOLAR-CELLS UNDER ILLUMINATION, Solar energy materials and solar cells, 43(3), 1996, pp. 263-272
Citations number
14
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
43
Issue
3
Year of publication
1996
Pages
263 - 272
Database
ISI
SICI code
0927-0248(1996)43:3<263:AODITP>2.0.ZU;2-E
Abstract
We have investigated the effect of light-soaking on the p-doped layer of amorphous silicon (a-Si:H) solar cells by low temperature (50-300 K ) AC conductance measurements. The experimental results are interprete d on the basis of an equilibration model of the doped material. The mo del takes into account the finite dimension of the layer and its prese nce inside a complex structure. It is shown that the Fermi level shift s after light soaking, which can result in activation of the doping im purities.