We report on the time-resolved study of the dynamics of coherent plasm
on-phonon modes in n-doped GaAs at different doping levels. The measur
ements show that the initially thermalized background majority plasma
participates in the coherent plasmon-phonon oscillation and that the o
bserved frequency is determined by the total electron density includin
g both the background doping and the optical excitation. The dephasing
of the coupled plasmon-phonon oscillation is found to be slower (i) a
s the relative contribution of the optical excitation to the total car
rier density decreases and (ii) as the frequency approaches that of th
e transverse-optical phonon resonance.