100-MW HIGH-POWER ANGLED-STRIPE SUPERLUMINESCENT DIODES WITH A NEW REAL REFRACTIVE-INDEX-GUIDED SELF-ALIGNED STRUCTURE

We have developed 100-mW high-power angled-stripe superluminescent dio des with a new angled-stripe real refractive-index guided self-aligned structure. The structure has a GaAlAs optical confinement layer on a planar active layer and an inclined current injection stripe by 5 degr ees with respect to the facet normal. The structure gives small intern al loss (similar to 10 cm(-1)) and facet power reflectivity less than the order of 10(-6). As a result, the output power as high as 105 mW a t a low operating current of 270 mA is obtained with less than 3% spec tral modulation and 10.5 nm full width at half maximum (FWHM) spectral width.