DYNAMIC SCALING IN CONSERVED SYSTEMS WITH COUPLED FIELDS - APPLICATION TO SURFACTANT-MEDIATED GROWTH

We present an analytical study of the interaction of two nonequilibriu m conservative fields. Due to the conservative character of the relaxa tion mechanism, the scaling exponents can be obtained exactly using dy namic renormalization group. We apply our results to surfactant-mediat ed growth of semiconductors. We find that the coupling between the sur factant thickness and the interface height cannot account for the expe rimentally observed layered growth, implying that reduced diffusion of the embedded atoms is a key mechanism in surfactant-mediated growth.