A STEADY-STATE APPROACH TO DETERMINE DIFFUSION-COEFFICIENTS - THE MIGRATION OF SILICON ON THE SI(100) SURFACE

Authors
ALDAO CM IGUAIN JL MARTIN HO
Citation
Cm. Aldao et al., A STEADY-STATE APPROACH TO DETERMINE DIFFUSION-COEFFICIENTS - THE MIGRATION OF SILICON ON THE SI(100) SURFACE, Surface science, 366(3), 1996, pp. 483-490
Citations number
8
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
366
Issue
3
Year of publication
1996
Pages
483 - 490
Database
ISI
SICI code
0039-6028(1996)366:3<483:ASATDD>2.0.ZU;2-1
Abstract
We introduce a steady-state method to analytically determine diffusion coefficients for a particle in a strip with multiple inequivalent ads orption sites in the unit cell. This approach is applied to a variety of models showing its simplicity and usefulness. In particular, the di ffusion coefficient of a Si adatom on the Si(100) for a model based on the Stillinger-Weber potential is computed. Comparisons with stochast ic kinetic simulations are presented.